Apparatuses and methods for logic/memory devices

ABSTRACT

Apparatuses and methods are provided for logic/memory devices. An example apparatus comprises a plurality of memory components adjacent to and coupled to one another. A logic component is coupled to the plurality of memory components. At least one memory component comprises a memory device having an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry includes a sense amplifier and a compute component. Timing circuitry is coupled to the array and sensing circuitry and configured to control timing of operations for the sensing circuitry. The logic component comprises control logic coupled to the timing circuitry. The control logic is configured to execute instructions to cause the sensing circuitry to perform the operations.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory andmethods, and more particularly, to apparatuses and methods forlogic/memory devices.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other computing systems. There aremany different types of memory including volatile and non-volatilememory. Volatile memory can require power to maintain its data (e.g.,host data, error data, etc.) and includes random access memory (RAM),dynamic random access memory (DRAM), static random access memory (SRAM),synchronous dynamic random access memory (SDRAM), and thyristor randomaccess memory (TRAM), among others. Non-volatile memory can providepersistent data by retaining stored data when not powered and caninclude NAND flash memory, NOR flash memory, and resistance variablememory such as phase change random access memory (PCRAM), resistiverandom access memory (RRAM), and magnetoresistive random access memory(MRAM), such as spin torque transfer random access memory (STT RAM),among others.

Computing systems often include a number of processing resources (e.g.,one or more processors), which may retrieve and execute instructions andstore the results of the executed instructions to a suitable location. Aprocessing resource (e.g., CPU) can comprise a number of functionalunits such as arithmetic logic unit (ALU) circuitry, floating point unit(FPU) circuitry, and/or a combinatorial logic block, for example, whichcan be used to execute instructions by performing logical operationssuch as AND, OR, NOT, NAND, NOR, and XOR, and invert (e.g., inversion)logical operations on data (e.g., one or more operands). For example,functional unit circuitry may be used to perform arithmetic operationssuch as addition, subtraction, multiplication, and/or division onoperands via a number of logical operations.

A number of components in a computing system may be involved inproviding instructions to the functional unit circuitry for execution.The instructions may be executed, for instance, by a processing resourcesuch as a controller and/or host processor. Data (e.g., the operands onwhich the instructions will be executed) may be stored in a memory arraythat is accessible by the functional unit circuitry. The instructionsand/or data may be retrieved from the memory array and sequenced and/orbuffered before the functional unit circuitry begins to executeinstructions on the data. Furthermore, as different types of operationsmay be executed in one or multiple clock cycles through the functionalunit circuitry, intermediate results of the instructions and/or data mayalso be sequenced and/or buffered. A sequence to complete an operationin one or more clock cycles may be referred to as an operation cycle.Time consumed to complete an operation cycle costs in terms ofprocessing and computing performance and power consumption, of acomputing device and/or system.

In many instances, the processing resources (e.g., processor and/orassociated functional unit circuitry) may be external to the memoryarray, and data is accessed via a bus between the processing resourcesand the memory array to execute a set of instructions. Processingperformance may be improved in a processor-in-memory (PIM) device, inwhich a processor may be implemented internal and/or near to a memory(e.g., directly on a same chip as the memory array). A PIM device maysave time by reducing and/or eliminating external communications and mayalso conserve power.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an apparatus in the form of a computingsystem including one example of a processing in memory (PIM) capabledevice coupled to a host.

FIG. 2 is another block diagram in greater detail of a portion of oneexample of a PIM capable device.

FIG. 3A is a block diagram of a logic/memory device having logic sharedbetween a memory component and a logic component in accordance with anumber of embodiments of the present disclosure.

FIG. 3B is another block diagram of a logic/memory device having logicshared between a memory component and a logic component in accordancewith a number of embodiments of the present disclosure.

FIG. 4 illustrates a representation of a computing system in accordancewith a number of embodiments of the present disclosure.

FIG. 5A is a block diagram illustrating a quadrant of a computing systemin accordance with a number of embodiments of the present disclosure.

FIG. 5B is another block diagram illustrating a quadrant of a computingsystem in accordance with a number of embodiments of the presentdisclosure.

FIG. 6 is a schematic diagram illustrating sensing circuitry to a memorydevice in accordance with a number of embodiments of the presentdisclosure.

FIG. 7 is a schematic diagram illustrating sensing circuitry to a memorydevice in accordance with a number of embodiments of the presentdisclosure.

FIG. 8 is a logic table illustrating selectable logic operation resultsimplemented by a sensing circuitry shown in FIG. 3 in accordance with anumber of embodiments of the present disclosure.

DETAILED DESCRIPTION

The present disclosure includes apparatuses and methods for logic/memorydevice. In one example embodiment, execution of logical operations isperformed on both one or more memory components and a logical componentto a logic/memory device.

An example apparatus comprises a plurality of memory components adjacentto and coupled to one another. A logic component is coupled to theplurality of memory components. At least one memory component comprisesa partitioned portion having an array of memory cells and sensingcircuitry coupled to the array. The sensing circuitry includes a senseamplifier and a compute component configured to perform operations.Timing circuitry is coupled to the array and sensing circuitry tocontrol timing of operations for the sensing circuitry. The logiccomponent comprises control logic coupled to the timing circuitry. Thecontrol logic is configured to execute instructions to performoperations with the sensing circuitry.

The logic component may comprise logic that is partitioned among anumber of separate logic/memory devices (also referred to as“partitioned logic”) and which is coupled to timing circuitry for agiven logic/memory device. The partitioned logic on a logic component atleast includes control logic that is configured to execute instructionsto cause operations to be performed on one or more memory components. Atleast one memory component includes a portion having sensing circuitryassociated with an array of memory cells. The array may be a dynamicrandom access memory (DRAM) array and the operations can include logicalAND, OR, and/or XOR Boolean operations. The timing circuitry and thecontrol logic may be in different clock domains and operate at differentclock speeds. The timing circuitry is separate from other controlregisters, e.g., double data rate (DDR) registers, used to control readand write access requests for the array, e.g., in a DRAM array.

In some embodiments, a logic/memory device allows input/output (I/O)channel and processing in memory (PIM) control over a bank or set ofbanks allowing logic to be partitioned to perform logical operationsbetween a memory (e.g., dynamic random access memory (DRAM)) componentand a logic component. Through silicon vias (TSVs) may allow foradditional signaling between a logic layer and a DRAM layer. Throughsilicon vias (TSVs) as the term is used herein is intended to includevias which are formed entirely through or partially through siliconand/or other single, composite and/or doped substrate materials otherthan silicon. Embodiments are not so limited. With enhanced signaling, aPIM operation may be partitioned between components, which may furtherfacilitate integration with a logic component's processing resources,e.g., an embedded reduced instruction set computer (RISC) typeprocessing resource and/or memory controller in a logic component.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how one or more embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure. As used herein, designators such as “N”, “M”,etc., particularly with respect to reference numerals in the drawings,indicate that a number of the particular feature so designated can beincluded. As used herein, “a number of” a particular thing can refer toone or more of such things (e.g., a number of memory arrays can refer toone or more memory arrays). A “plurality of” is intended to refer tomore than one of such things.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 206 may referenceelement “06” in FIG. 2, and a similar element may be referenced as 606in FIG. 6. As will be appreciated, elements shown in the variousembodiments herein can be added, exchanged, and/or eliminated so as toprovide a number of additional embodiments of the present disclosure. Inaddition, as will be appreciated, the proportion and the relative scaleof the elements provided in the figures are intended to illustratecertain embodiments of the present invention, and should not be taken ina limiting sense.

FIG. 1 is a block diagram of an apparatus in the form of a computingsystem 100 including one example of a processing in memory (PIM) capabledevice 101 coupled to a host 110. The PIM capable device 101 (alsoreferred to as “memory device 101”) may include a controller 140. FIG. 1is provided as an example of a system including a current PIM capabledevice 101 architecture. As will be described in connection with theembodiments shown in FIGS. 3A-5B, one or more of the functions of thecontroller 140 discussed in connection with FIG. 1 may be partitionedbetween a plurality of memory components and one or more logiccomponents to form different logic/memory device architectures.

As shown in the example of FIG. 1, the memory device 101 may include amemory array 130, registers 136, sensing circuitry 150, and additionallogic circuitry 170. The system 100 can include separate integratedcircuits or both the logic and memory can be on the same integrateddevice as with a system on a chip (SoC). The system 100 can be, forinstance, a server system and/or a high performance computing (HPC)system and/or a portion thereof.

For clarity, the system 100 has been simplified to focus on featureswith relevance to the present disclosure. The memory array 130 can be aDRAM array, SRAM array, STT RAM array, PCRAM array, TRAM array, RRAMarray, NAND flash array, and/or NOR flash array, for instance. The array130 can comprise memory cells arranged in rows coupled by access lines(which may be referred to herein as word lines or select lines) andcolumns coupled by sense lines, which may be referred to herein as datalines or digit lines. Although a single array 130 is shown in FIG. 1,embodiments are not so limited. For instance, memory component 101 mayinclude a number of arrays 130 (e.g., a number of banks of DRAM cells,NAND flash cells, etc.).

The memory device 101 includes address circuitry 142 to latch addresssignals provided over a data bus 156 (e.g., an I/O bus) through I/Ocircuitry 144. Status and/or exception information can be provided fromthe controller 140 on the memory device 101 to a host 110 and/or logiccomponent through an out-of-band bus 157. Address signals are receivedthrough address circuitry 142 and decoded by a row decoder 146 and acolumn decoder 152 to access the memory array 130. Data can be read frommemory array 130 by sensing voltage and/or current changes on the datalines using sensing circuitry 150. The sensing circuitry 150 can readand latch a page (e.g., row) of data from the memory array 130. The I/Ocircuitry 144 can be used for bi-directional data communication withhost 110 over the data bus 156. The write circuitry 148 is used to writedata to the memory array 130. Address, control and/or commands, e.g.,processing in memory (PIM) commands, may be received to the controller140 via bus 154.

Registers 136 may include control registers, e.g., double data rate(DDR) control registers in a DRAM, to control the operation of the array130, e.g., DRAM array, and/or controller 140. As such, the registers 136may be coupled to the I/O circuitry 144 and/or controller 140. Invarious embodiments the registers 136 may be memory mapped I/O registers136. The memory mapped I/O registers 136 can be mapped to a plurality oflocations in memory where microcode instructions are stored.

In various embodiments, controller 140 may decode signals received viabus 154 from the host 110. These signals can include chip enablesignals, write enable signals, and address latch signals that are usedto control operations performed on the memory array 130, including dataread, data write, and data erase operations. In one or more embodiments,portions of the controller 140 can be a reduced instruction set computer(RISC) type controller operating on 32 and/or 64 bit lengthinstructions. In various embodiments, the controller 140 is responsiblefor executing instructions from the host 110 and/or logic components inassociation with the sensing circuitry 150 to perform logical Booleanoperations such as AND, OR, XOR, etc. Further, the controller 140 cancontrol shifting data (e.g., right or left) in an array, e.g., memoryarray 130. Additionally, portions of the controller 140 can include astate machine, a sequencer, or some other type of controller, describedfurther in connection with FIG. 2.

Examples of the sensing circuitry 150 and its operations are describedfurther below in connection with FIGS. 6-8. In various embodiments thesensing circuitry 150 can comprise a plurality of sense amplifiers and aplurality of compute components, which may serve as and be referred toherein as an accumulator, and can be used to perform logical operations(e.g., on data associated with complementary data lines).

In various embodiments, the sensing circuitry 150 can be used to performlogical operations using data stored in array 130 as inputs and storethe results of the logical operations back to the array 130 withouttransferring data via a sense line address access (e.g., without firinga column decode signal). As such, various compute functions can beperformed using, and within, sensing circuitry 150 rather than (or inassociation with) being performed by processing resources external tothe sensing circuitry (e.g., by a processing resource associated withhost 110 and/or other processing circuitry, such as ALU circuitry,located on memory device 101 (e.g., on controller 140 or elsewhere)).

In various previous approaches, data associated with an operand, forinstance, would be read from memory via sensing circuitry and providedto external ALU circuitry via I/O lines (e.g., via local I/O linesand/or global I/O lines). The external ALU circuitry could include anumber of registers and would perform compute functions using theoperands, and the result would be transferred back to the array via theI/O lines. In contrast, in a number of embodiments of the presentdisclosure, sensing circuitry 150 is configured to perform logicaloperations on data stored in memory array 130 and store the result backto the memory array 130 without enabling an I/O line (e.g., a local I/Oline) coupled to the sensing circuitry 150. The sensing circuitry 150can be formed on pitch with the memory cells of the array 130.Additional peripheral sense amplifiers, extended row address (XRA)registers, cache and/or data buffering, e.g., additional logic circuitry170, can be coupled to the sensing circuitry 150 and can be used tostore, e.g., cache and/or buffer, results of operations describedherein.

Thus, in various embodiments, circuitry external to array 130 andsensing circuitry 150 is not needed to perform compute functions as thesensing circuitry 150 can perform the appropriate logical operations toperform such compute functions without the use of an external processingresource. Therefore, the sensing circuitry 150 may be used to complimentand/or to replace, at least to some extent, such an external processingresource (or at least the bandwidth consumption of such an externalprocessing resource).

However, in a number of embodiments, the sensing circuitry 150 may beused to perform logical operations (e.g., to execute instructions) inaddition to logical operations performed by an external processingresource (e.g., on host 110). For instance, processing resources on host110 and/or sensing circuitry 150 on memory device 101 may be limited toperforming only certain logical operations and/or a certain number oflogical operations.

Enabling an I/O line can include enabling (e.g., turning on) atransistor having a gate coupled to a decode signal (e.g., a columndecode signal) and a source/drain coupled to the I/O line. However,embodiments are not limited to not enabling an I/O line. For instance,in a number of embodiments, the sensing circuitry (e.g., 150) can beused to perform logical operations without enabling column decode linesof the array; however, the local I/O line(s) may be enabled in order totransfer a result to a suitable location other than back to the array130 (e.g., to an external register).

FIG. 2 is another block diagram in greater detail of a portion of oneexample of a PIM capable device 220 such as memory device 101 in FIG. 1.In the example of FIG. 2, a controller 240-1, . . . , 240-7 (referred togenerally as controller 240) may be associated with each bank 221-1, . .. , 221-7 (referred to generally as 221) to the PIM capable device 220.Eight banks are shown in the example of FIG. 2. However, embodiments arenot limited to this example number. Controller 240 may representcontroller 140 shown in FIG. 1. Each bank may include one or more arraysof memory cells (not shown). For example each bank may include one ormore arrays such as array 130 in FIG. 1 and can include decoders, othercircuitry and registers shown in FIG. 1. In the example PIM capabledevice 220 shown in FIG. 2, controllers 240-1, . . . , 240-7 are shownhaving control logic 231-1, . . . , 231-7, sequencers 232-1, . . . ,232-7, and timing circuitry 233-1, . . . , 233-7 as part of a controller240 on one or more memory banks 221 of a memory device 220. The PIMcapable device 220 may represent part of memory device 101 shown in FIG.1.

As shown in the example of FIG. 2, the PIM capable device 220 mayinclude a high speed interface (HSI) 241 to receive data, addresses,control signals, and/or commands at the PIM capable device 220. Invarious embodiments, the HSI 241 may be coupled to a bank arbiter 245associated with the PIM capable device 220. The HSI 241 may beconfigured to receive commands and/or data from a host, e.g., 110 as inFIG. 1. As shown in the example of FIG. 2, the bank arbiter 245 may becoupled to the plurality of banks 221-1, . . . , 221-7.

In the example shown in FIG. 2, the control logic 231-1, . . . , 231-7may be in the form of a microcoded engine responsible for fetching andexecuting machine instructions, e.g., microcode instructions, from anarray of memory cells, e.g., an array as array 130 in FIG. 1, that ispart of each bank 221-1, . . . , 221-7 (not detailed in FIG. 2). Thesequencers 232-1, . . . , 232-7 may also be in the form of microcodedengines. Alternatively, the control logic 231-1, . . . , 231-7 may be inthe form of a very large instruction word (VLIW) type processingresource and the sequencers 232-1, . . . , 232-7, and the timingcircuitry 233-1, . . . , 233-7 may be in the form of state machines andtransistor circuitry.

The control logic 231-1, . . . , 231-7 may decode microcode instructionsinto function calls, e.g., microcode function calls (uCODE), implementedby the sequencers 232-1, . . . , 232-7. The microcode function calls canbe the operations that the sequencers 232-1, . . . , 232-7 receive andexecute to cause the PIM device 220 to perform particular logicaloperations using the sensing circuitry such as sensing circuitry 150 inFIG. 1. The timing circuitry 233-1, . . . , 233-7 may provide timing tocoordinate performance of the logical operations and be responsible forproviding conflict free access to the arrays such as array 130 in FIG.1.

As described in connection with FIG. 1, the controllers 240-1, . . . ,240-7 may be coupled to sensing circuitry 150 and/or additional logiccircuitry 170, including cache, buffers, sense amplifiers, extended rowaddress (XRA) latches, and/or registers, associated with arrays ofmemory cells via control lines and data paths shown in FIG. 2 as 255-1,255-7. As such, sensing circuitry 150 and logic 170 shown in FIG. 1 canbe associated to the arrays of memory cells 130 using data I/Os shown as255-1, . . . , 255-7 in FIG. 2. The controllers 240-1, . . . , 240-7 maycontrol regular DRAM operations for the arrays such as a read, write,copy, and/or erase operations, etc. Additionally, however, microcodeinstructions retrieved and executed by the control logic 231-1, . . . ,231-7 and the microcode function calls received and executed by thesequencers 232-1, . . . , 232-7 cause sensing circuitry 150 shown inFIG. 1 to perform additional logical operations such as addition,multiplication, or, as a more specific example, Boolean operations suchas an AND, OR, XOR, etc., which are more complex than regular DRAM readand write operations. Hence, in this PIM capable device 220 example,microcode instruction execution and logic operations are performed onthe banks 221-1, . . . , 221-7 to the PIM device 220.

As such, the control logic 231-1, . . . , 231-7, sequencers 232-1, . . ., 232-7, and timing circuitry 233-1, . . . , 233-7 may operate togenerate sequences of operation cycles for a DRAM array. In the PIMcapable device 220 example, each sequence may be designed to performoperations, such as a Boolean logic operations AND, OR, XOR, etc., whichtogether achieve a specific function. For example, the sequences ofoperations may repetitively perform a logical operation for a one (1)bit add in order to calculate a multiple bit sum. Each sequence ofoperations may be fed into a first in/first out (FIFO) buffer coupled tothe timing circuitry 233-1, . . . , 233-7 to provide timing coordinationwith the sensing circuity 150 and/or additional logic circuitry 170associated with the array of memory cells 130, e.g., DRAM arrays, shownin FIG. 1.

In the example PIM capable device 220 shown in FIG. 2, the timingcircuitry 233-1, . . . , 233-7 provides timing and provides conflictfree access to the arrays from four (4) FIFO queues. In this example,one FIFO queue may support array computation, one may be for Instructionfetch, one for microcode (e.g., Ucode) instruction fetch, and one forDRAM I/O. Both the control logic 231-1, . . . , 231-7 and the sequencers232-1, . . . , 232-7 can generate status information, which is routedback to the bank arbiter 245 via a FIFO interface. The bank arbiter 245may aggregate this status data and report it back to a host 110 via theHSI 241.

FIGS. 3A and 3B are block diagrams of logic/memory devices 305 and 307in accordance with a number of embodiments of the present disclosure.The logic/memory device embodiments 305 and 307 illustrate logicpartitioned (also referred to as “partitioned logic”) between a memorycomponent 301 and a logic component 302. The logic/memory deviceembodiments 305 and 307 may be a part of a 3D logic/memory device stackas shown in FIG. 4 and may include I/O channels 355 coupling the memorycomponents 301 to the logic components 302.

In some embodiments the I/O channels may be in the form of throughsilicon vias (TSVs). The TSVs may be formed either entirely or partiallythrough silicon or other single, composite and/or doped substratematerial to the components. Such TSV technology allows for additionalsignaling between a logic component 302 and one or more memorycomponents 301. Given enhanced signaling through TSVs, PIM capabledevice controller operation, like that shown as 240 in FIG. 2, can bepartitioned between a logic component 302 and memory components 301 of a3D logic/memory device stack.

In the example embodiments of FIGS. 3A and 3B control logic 331(representing the control logic structure and functions described inconnection with 231 in FIG. 2) may be located on the logic component 302to enhance and facilitate close integration with the processingresources of one or more hosts such as hosts 510 discussed in FIGS. 5Aand 5B in a distributed computing system and/or in system on chip (SoC)environment.

FIG. 2 provided a PIM device 220 example in which the controller 240 wasdescribed having three parts; control logic, sequencer and timingcircuitry. In that example the timing circuitry 233 and the sequencer232 were described as relatively small state machines and the controllogic 231 was described as being a microcoded engine.

FIG. 3A illustrates an example logic/memory device 305 embodiment inwhich both the control logic 331 and the sequencer 332 are located onthe logic component 302 of the logic/memory device 305, but stillcoupled to the one or more memory components 301 via high speed I/Ochannel 355. As noted above, the control logic 331 may be in the form ofa microcoded engine such as an embedded, reduced instruction setcomputer (RISC) type controller and the sequencer 332 may be in the formof a state machine.

Alternatively, both the control logic 331 and the sequencer 332 may bein the form of microcoded engines. As used herein, an engine is intendedto include hardware and may include software and/or firmware, but atleast includes hardware, e.g., circuitry in the form of an applicationspecific integrated circuit (ASIC). For example, in current generationprocessing in memory (PIM) devices, microcode may be used and executedon the PIM device by a reduced instruction set computer (RISC) typecontroller, ASIC, etc. A RISC type controller is one of a family ofprocessors which operates on a reduced bit length instruction, e.g., a32 or 64 bit length instruction. Thus, as used herein, reference tomicrocode instructions on a PIM capable device is intended to include a32 or 64 bit length instruction. However, embodiments may include otherbit length instructions.

Thus, in various embodiments, execution of microcode instructions forPIM capable logic/memory devices 305 and 307 is performed by logiccomponent 302, separate from a host 110 as shown in FIG. 1 and alsoseparate from the memory component 301. In both the embodiments of FIGS.3A and 3B, the timing circuitry 333 is remains with the memory component301. As used herein the timing circuitry 333 on the memory component 301may be referred to as “first partitioned logic”. The timing circuitry333 can represent the timing circuitry 233 describe with the PIM capabledevice 220 in FIG. 2. In such embodiments, the control logic 331 and thesequencer 332 may be configured to execute particularly developedfirmware, e.g., particular purpose PIM microcode, on the logic component302.

The embodiment of FIG. 3B illustrates an embodiment of the presentdisclosure in which the control logic 331 is located on the logiccomponent 302 of the logic/memory device 307, but both the sequencer 332and the timing circuity 333 remain on the memory component 301. In theembodiment of FIG. 3B where both the sequencer 332 and the timingcircuitry 333 are located on the memory component 301, the sequencer 332and the timing circuitry 333 may be referred to as the “firstpartitioned logic” as being located on the memory component 301. Thecontrol logic 331 is still coupled to the memory component 301 via highspeed I/O channel 355. The sequencer 332 and timing circuitry 333 mayrepresent timing circuitry 233 and sequencer 232 as described inconnection with FIG. 2.

In the example embodiment of FIG. 3B, the timing circuitry 333 andsequencer 332 on the memory component 301 may both be state machines toprovide timing and control command sequencing, respectively. Thus, thetiming circuitry 333 and sequencer 332 may be compact yet be responsiblefor providing conflict free access to arrays, e.g., DRAM arrays, and/orsensing circuitry, such as array 130 and sensing circuitry 150 in FIG.1, for logical operations performed on a bank 321. The sequencer 332 andtiming circuitry 333 are separate from the control registers 136 used innormal DRAM logical operations such as read, write, copy, and/or moveDRAM array operations.

As shown in the embodiments of FIGS. 3A and 3B, the memory component 301of the logic/memory devices 305 and 307 may contain one or more banks321. The banks 321 may contain an array of memory cells 330 and sensingcircuitry 350 coupled thereto. The array 330 and sensing circuitry 350may represent array 130 and sensing circuitry 150 described inconnection with FIG. 1. Embodiments of the sensing circuitry 350 aredescribed in more detail in connection with FIGS. 6-8. Additionally, inthe embodiments of FIGS. 3A and 3B, the memory component 301 of thelogic/memory devices 305 and 307 may include additional circuitry in theform of I/O buffers and/or extend row address (XRA) registers, rowaddress strobe (RAS) logic, etc. 370. This additional logic circuitry370 may represent addition logic circuitry 170 described in FIG. 1.

As shown in the example embodiments of FIGS. 3A and 3B, the logiccomponent 302 can include switching circuitry 323 to provide routingacross arrays 330 associated with one or more banks 321. In someembodiments, the switching circuitry 330 may replace or perform at leastsome of the functions of the HSI 241 described in connection with FIG.2.

In the example embodiments of FIGS. 3A and 3B, placing at least thecontrol logic 331 on the logic component 302 of the logic/memory devices305 and 307 may allow for higher speed device operation by facilitatingtight integration to a host processing resource such as host 110 shownin FIG. 1 and/or host device(s) 510 shown and described in connectionwith FIGS. 5A and 5B. As used herein the control logic 331 on the logiccomponent 302 may be referred to as “second partitioned logic”. In theembodiment of FIG. 3A, where both the control logic 331 and sequencer332 are located on the logic component 302, the control logic and thesequencer 332 may collectively be referred to as the “second partitionedlogic” as being located on the logic component 302. In some embodiments,coordinated caching on the logic component 302 with the one or morememory components 301 of the logic/memory devices 305 and 307 may beachieved. Further, improved integration with existing cache coherencyprotocols to separate hosts, such as host 110 in FIG. 1 and/or hostdevice(s) shown in FIGS. 5A and 5B, may be achieved both closely as partof control logic 331 and/or more loosely with switching circuitry 323and I/Os 355 (e.g., such as exists with a client on a symmetricmultiprocessing (SMP)-capable bus).

The example embodiments shown in FIGS. 3A and 3B can facilitate directmemory access (DMA) functionality both inter-bank and intra-bank to oneor more banks 321. Further, the logic/memory device embodiments 305 and307 may allow for a lower latency to be achieved with PIM commandrouting operations. The same may be achieved even with the timingcircuitry 333 of the memory component 301 operating in a different clockdomain and/or at a different clock speed than a clock domain and/orclock speed of the control logic 331 on the logic component 302.

According to the example embodiments of FIGS. 3A and 3B, the logiccomponent 302 can include arbitration circuitry 339. The arbitrationcircuitry is configured to apply a scheduling policy that prioritizesbetween normal DRAM requests and PIM requests, e.g., PIM commands, foruse of array 300 that are received at the logic component 302 by theswitching circuitry 323 and/or control logic 331. In the embodiment ofFIG. 3A, the arbitration circuitry 339 may be formed as an integratedcircuit with the control logic 331 and sequencer 332 to collectivelyform logic 325 on the logic component 302 of logic/memory device 305. Inthis example, the logic 325 may represent the partitioned logic 525 onthe logic component 502 of a logic/memory device 520 shown and describedin the embodiment of FIG. 5A. In the embodiment of FIG. 3B, thearbitration circuitry 339 may be formed as an integrated circuit withthe control logic 331 to collectively form logic 325 on the logiccomponent 302 of logic/memory device 307. In this example the logic 325may represent the partitioned logic 525 on the logic component 502 of alogic/memory device 520 shown and described in the embodiment of FIG.5B.

The scheduling policies implemented by the arbitration circuitry may beaccording to an all, some, or none set of rules for prioritizing betweenDRAM requests and PIM requests received at a logic component 302 for useof an array 330 and/or sensing circuitry 350 of a bank 321 on a memorycomponent 301. For example, one policy may allow a DRAM request receivedat the logic component 302 to always halt, e.g., stop or pause, a PIMcommand operation associated with an earlier PIM request. According toanother example policy, the arbitration circuitry 339 may be configuredto detect whether a threshold number or type of DRAM requests arereceived at the logic component 302 within a particular time window,e.g., within a particular number of packet frames, clock cycles, etc.,after a PIM request is received at the logic component 302. In such anexample policy, if a threshold number or type of DRAM requests arereceived at the logic component 302 within the particular time window,then the arbitration circuitry 339 may be configured to stop or hold PIMcommand request execution associated with an earlier PIM request untilafter performance of the DRAM request later received at the logiccomponent 302. Alternatively, in another example policy the arbitrationcircuitry 339 may be configured to give priority to certain or all PIMrequests received at the logic component 302 over certain or all DRAMrequests received at the logic component 302. Embodiments are notlimited to these examples.

Further, the apparatus and methods described herein provide embodimentsthat are not constrained to the control of normal control registers,e.g., double data rate (DDR) timing control registers, associated withmemory arrays, e.g., DRAM arrays. Instead, the timing circuitry 333 inthe memory component 301 is configured for logical operations on PIMcapable logic/memory devices 305 and 307 separate from the normalcontrol registers shown as 136 in FIG. 1. Additionally, as shown in theexample embodiments of FIGS. 3A and 3B, the control logic 331 and thesequencer 332 may be variously located between the logic component 302and the memory component 301 to achieve PIM capable logic/memory devices305 and 307 which can perform logical operations described in moredetail in connection with FIGS. 6-8.

One example expanding on the manner in which logic that is variouslypartitioned between a memory component and a logic component canadvantageously facilitate and/or enhance integration with one or moreseparate host processing resources is illustrated in the case ofmaintaining cache coherency. For example, the partitioned logic 325 can,in at least one embodiment, maintain cache coherency between the logiccomponent 302 and the memory component 301. In this example, thepartitioned logic 325 may be configured to create a block select asmetadata to a cache line and to create a subrow select as metadata tothe cache line. The partitioned logic 325 may be in the form ofhardware, software and/or firmware, but at least hardware in the form ofcircuitry to execute instructions and/or perform logical operations. Inthis example, the partitioned logic 325 is configured to create and usethe block select metadata to enable an offset to a cache line associatedwith a separate host. The partitioned logic 325 is further configured tocreate and use the subrow select to enable multiple sets to setassociative cache used by a separate host. In at least one embodiment,the block select may provide an offset to a page in a dynamic randomaccess memory (DRAM). Additionally, in some embodiments, the partitionedlogic 325 of the logic component 302 that is coupled to the memorycomponent 301 may be configured to generate a bulk invalidate command toa cache memory upon receipt of a bit vector operation instruction.

PIM capable device operations can use bit vector based operations. Asused herein, the term “bit vector” is intended to mean a physicallycontiguous number of bits on a bit vector memory device, e.g., PIMdevice, whether physically contiguous in rows (e.g., horizontallyoriented) or columns (e.g., vertically oriented) in an array of memorycells. Thus, as used herein a “bit vector operation” is intended to meanan operation that is performed on a bit-vector that is a contiguousportion (also referred to as “chunk”) of virtual address space, e.g.,used by a PIM device. For example, a chunk of virtual address space mayhave a bit length of 256 bits. A chunk may or may not be contiguousphysically to other chunks in the virtual address space. As used herein,the term “bulk” is intended to mean a capability to address and operateon information in multiple locations, e.g., multiple cache lines,without having to separately address and communicate instructions toeach of the multiple locations.

In previous host based cache architecture approaches (whether fullyassociative, set associative, or direct mapped), the cache architectureuses part of an address generated by a processor associated with a hostto locate the placement of a block in the cache and may have somemetadata (e.g., valid and dirty bits) describing the state of the cacheblock. This is because processing resources should have the same view ofmemory. Accordingly, a cache based memory system will use some form ofcache coherency protocol, e.g., either a MESI (modified, exclusive,shared, invalid) or directory based cache coherency protocol, tomaintain access to accurate data in the cache memory system betweenprocessing resources.

In previous host based approaches a last level cache architecture may beconstructed for intended use with a 3D integrated memory, with tags andmeta data being stored on-chip in SRAM and the block data being storedin quickly accessed DRAM. In such an architecture, the matching occursusing the on-chip SRAM tags and the memory access is accelerated by therelatively fast on-package DRAM (as compared to an off-packagesolution).

In PIM capable devices, microcode instructions executing on a processingresource may want to access an array of the PIM capable device toperform a bit vector based operation. A processing resource associatedwith a host may only be aware of the host's cache line bit length foruse in maintaining cache coherency on the host. However, as noted, a bitvector based operation in a PIM capable device may operate on bitvectors of a much different bit length. A typical use pattern forperforming a bit vector based operation and maintaining cache coherencyin software may involve expensive flushing of an entire cache or markingparticular pages as “uncacheable”. To make a PIM capable device cachecoherency protocol aware to a level equivalent to that of a host wouldbe very costly and complex in terms of hardware and software devicespace usage and design development time. Further, even if this were donefor a cache coherency protocol of a particular host platform, the PIMcapable device would not be cache coherency protocol aware for hosts ofdifferent platforms using different cache coherency protocols.

In contrast, according to various embodiments such as described in FIGS.3A and 3B, the partitioned logic 325 can include hardware, e.g., in theform of an application specific integrated circuit (ASIC), configured toand can operate on more compactly designed microcode instructions in theform of firmware, e.g., 32 or 64 bit microcode instructions stored inarray 330 and executed by the control logic 331. According toembodiments, the partitioned logic 325 may include an invalidate engine(not shown) associated with the control logic 331. In this manner, thecontrol logic 331 may be configured for a particular cache coherencyprotocol associated with a host's cache memory using particularlydesigned firmware to implement particular PIM operations at asignificantly lower costs that that which would be required by hardwareand software which fully replicated a host cache coherency protocol.Thus, in some embodiments, the control logic 331 in the partitionedlogic 325 may be configured to recognize the above described blockselect and the subrow select metadata and use that metadata to provide acompute enabled cache.

For example, in logic/memory device embodiments 305 and 307, memorybanks 321 on the memory component 301 may have independent I/O paths,e.g., TSVs, coupling to the control logic 331 of the logic component 302and may be controlled explicitly by the partitioned logic 325 on thelogic component 302. In this manner cache blocks on a logic component302 may be moved from an SRAM in the logic component 302 into a DRAMarray in a bank 321 on the memory component 301. The placement of thecache blocks may be controlled using the metadata data structurescreated and added to the host cache lines by the control logic 331 ofthe partitioned logic 325 on the logic component 302.

In at least one embodiment, the block select and subrow select metadatadata structures, created by the control logic 331 on the logic component302, may be data structures internal to the logic/memory deviceembodiments 305 and 307, e.g., stored and maintained between the logiccomponent 302 and memory component 301 and not stored, maintained ortracked as part of an address to the processing resources on a host,e.g., host 110 in FIG. 1. Again, control logic 331 on the partitionedlogic 325 on the logic component 302 is at least hardware configured toexecute microcoded instructions. In this manner, the control logic 331may be configured to change the block select and the subrow select, asneeded, and be configured to relocate the cache block data transparentlyto the processing resources of a host. Alternatively, however, thecontrol logic 325 can additionally be configured to store and maintain acopy of the block select and subrow select metadata structures withprocessing resources of a separate host. Embodiments are not limited tothe example given herein.

FIG. 4 illustrates an example of a system on a chip (SoC) 400 having aplurality of adjacent and coupled memory components 401-1, 401-2, . . ., 401-N (referred to collectively as 401) which are further coupled to alogic component 402. According to various embodiments the plurality ofadjacent and coupled memory components 401-1, . . . , 401-N may be inthe form of a plurality of individual memory die and/or distinct memorylayers formed as integrated circuits on a chip. The plurality of memorycomponents 401 can further be partitioned into distinct portions 421 ofthe plurality of memory components 401, e.g., partitioned into separateand distinct dynamic random access memory (DRAM) banks on each memorycomponent 401.

Similarly, the logic component 402 may be in the form of an individuallogic die and/or distinct logic layers formed as integrated circuits ona chip. In this example, the SoC 400 provides three dimensions (3D) bystacking the plurality of memory components 401 and interconnecting atleast one memory component 401-1, . . . , 401-N and to a logic component402 to collectively form a logic/memory device 420. The plurality ofmemory components 401-1, . . . , 401-N can be coupled to the logiccomponent 402 using I/O paths, e.g., through silicon vias (TSVs) (notshown). The manner in which TSVs, either entirely or partially throughsilicon or other single, composite and/or doped substrate material, maybe used to interconnect the components is well understood.

As used herein an apparatus is intended to mean one or more components,devices and/or systems which may be coupled to achieve a particularfunction. A system, as used herein, is intended to mean a collection ofdevices coupled together, whether in wired or wireless fashion, to forma larger network, e.g., as in a distributed computing network. Acomponent, as used herein, is intended to mean a die, substrate, layer,and/or integrated circuitry. As used herein, a device may be formedwithin or among components. Thus, as used herein, a “device” such as amemory device may be wholly within a memory component. Additionally,however, a device such as a logic/memory device is intended to mean somecombination of logic and memory components. According to embodiments, amemory device, logic device, and/or logic/memory device all includedevices able to perform a logical operation, e.g., an apparatus able toperform a Boolean logical operation.

TSV manufacturing techniques enable interconnection of multiple dielayers in order to construct three-dimensional dies. This ability tointerconnect multiple die layers permits building a memory device with acombination of memory storage layers and one or more logic layers. Inthis manner, the device provides the physical memory storage and logicalmemory transaction processing in a single electronic device package. Thearrangement shown in FIG. 4 is to illustrate an example configuration.Embodiments described herein, however, are not limited to this exampleand/or a particular die/layer arrangement.

The SoC 400 example shown in FIG. 4 may provide a very compact and powerefficient package with available bandwidth capacity of 320 GB/s perdevice. The illustrated SoC 400 may be capable of high bandwidth via ahierarchical and parallel approach to the design. A device hierarchy mayoccur across the logic and memory components and hardware parallelismmay occur in a planar manner across a given component.

In the example of FIG. 4, a combination and/or organization of logic andmemory resources between the plurality of memory components 401-1, . . ., 401-N and one or more logic components 402 for the SoC 400 may bereferred to as a logic/memory device 420. Through-silicon vias (TSVs)may interconnect each of the memory components 401-1, . . . , 401-N andone or more logic components 402, e.g., die and/or layers for eachlogic/memory device 420. In the illustration of FIG. 4, the SoC 400 isshown organized into sixteen (16) logic/memory devices 420 with eachdevice associated with at least a portion of the logic component 402 anda portion of one or more of the plurality of memory components 401-1, .. . , 401-N. Embodiments, however, are not limited to this example.Embodiments can include geometric and/or numerical configurationsdifferent from that described and illustrated in FIG. 4.

FIG. 5A is a block diagram illustrating in two-dimensions an embodimentof a quadrant 509 of SoC 400 shown in FIG. 4. FIG. 5B is a block diagramillustrating in two-dimensions another embodiment of a quadrant 511 ofSoC 400 shown in FIG. 4. In these example illustrations, fourlogic/memory devices 520-1, . . . , 520-M are shown (each logic/memorydevice generally referred to as 520) with each logic/memory device 520including a partitioned portion 521-1, . . . , 521-N (e.g., particularmemory banks) of the plurality of adjacent and coupled memory components501-1, . . . , 501-N and at least a partitioned portion 525-1 (e.g.,particular logic) of the one or more logic components 502. As shown, atleast one logic component 502 is adjacent to and coupled to theplurality of memory components 501-1, . . . , 501-N.

According to various embodiments, at least a portion of a logiccomponent 502 may be partitioned in relation to a logic/memory device520. For example, each logic/memory device 520 may include separatelogic 525-1, . . . , 525-M (also referred to as “partitioned logic” or“second partitioned logic” in relation to location on the logiccomponent 502) which is a partitioned portion of the logic component 502relative to a particular logic/memory device 520-1, . . . , 520-M. Asshown in the embodiment of FIG. 5A, each partitioned logic 525-1, . . ., 525-M (generally referred to as 525) includes control logic 531 andsequencer 532 to form a PIM capable logic/memory device 520 with timingcircuitry 533 in the partitioned portions 521-1, . . . , 521-N of theplurality of memory components 501-1, . . . , 501-N. Control logic 531and sequencer 532 may represent the control logic 231/331 and sequencer232/332 shown in FIGS. 2, 3A and 3B. Timing circuitry 533 is shownseparate and distinct from the normal control registers and timingcircuitry 536, e.g., DDR control registers and timing circuitry, whichmay be used for the partitioned portions 521-1, . . . , 521-N of theplurality of memory components 501-1, . . . , 501-N. The timingcircuitry 533 may represent the timing circuitry 233/333 shown in FIGS.2, 3A and 3B and the normal control registers and timing circuitry 536may represent the registers 136 shown in FIG. 1.

According to various embodiments, partitioned logic 525 may managememory reference operations for a logic/memory device 520. For example,partitioned logic 525 may provide access to one or more partitionedportions 521-1, . . . , 521-M (e.g., particular memory banks) of theplurality of memory components 501-1, . . . , 501-N. The partitionedportions 521-1, . . . , 521-N of the plurality of memory components501-1, . . . , 501-N may permit memory transactions to exist in parallelnot only across partitioned portions 521-1, . . . , 521-N of the memorycomponents 501-1, . . . , 501-N within a target logic/memory device520-1, but also in parallel across logic/memory devices 520-1, . . . ,520-M.

The partitioned logic 525-1, . . . , 525-M of a logic component 502 maybe in the form of control logic, state machine, etc. The partitionedlogic 525-1, . . . , 525-M may be in the form of hardware and firmwareto implement functions described herein.

In the embodiments of FIGS. 5A and 5B, the partitioned logic, 525-1, . .. , 525-M of a logic component 502 includes at least control logic 531(shown as 331 in FIGS. 3A and 3B). In the embodiment of FIG. 5A, asequencer 532 (shown as 332 in FIG. 3A) for each logic/memory device 520is also included on the logic component 502 to form a processing inmemory (PIM) capable logic/memory device 520. However, in the embodimentof FIG. 5B, a sequencer 532 (shown as 332 in FIG. 3B) for eachlogic/memory device 520 is provided on each portion 521-1, . . . , 521-Nof the plurality of memory components 501-1, . . . , 501-N to form a PIMcapable logic/memory device 520. As described in connection with FIGS.3A and 3B, the control logic 531 may be in the form of a microcodedengine which can execute microcode instructions. As used herein, anengine is intended to mean hardware and/or software, but at leasthardware in the form of transistor circuitry and/or an applicationspecific integrated circuit (ASIC). In some embodiments, the sequencer532 may also be in the form of a microcoded engine.

As shown in the example embodiments of FIGS. 5A and 5B, the logiccomponent 502 may include external input/output (I/O) link access, e.g.,links 529-1, . . . , 529-4, to the logic/memory devices 520 as well asinternal switching circuitry 523. The external I/O links, e.g., links529-1, . . . , 529-4 (generally referred to as 529), may be provided byfour, eight, or more logical links. In the example in FIG. 5, four links529-1, . . . , 529-4 (Link 0, Link 1, Link 2, and Link 3) are showncoupled to switching circuitry 523. The switching circuitry 523 maydirect transactions among a plurality of logic/memory devices 520, e.g.,to partitioned logic 525-1, . . . , 525-M associated with the portions521-1, . . . , 521-N of the plurality of memory components 501-1, . . ., 501-N.

The links 529 may support the ability to couple logic/memory devices 520to both hosts 510 or other network devices. This coupling can facilitatethe construction of memory subsystems with capacities larger than asingle logic/memory device 520 while not perturbing native linkstructures and packetized transaction protocols. Links 529 can beconfigured as host device links or pass-through links in a multitude oftopologies. In example, four potential device topologies based upon theexample four-link configuration can be configured in a network topology.These four potential device topologies include mesh, torus and/orcrossbar topologies. Chaining multiple logic/memory devices 520 togethercan increase a total memory capacity available to a host 510.

In the example embodiments of FIGS. 5A and 5B, the partitioned logic 525of the logic component 502 for a device 520 may include direct inlinememory module (DIMM) control logic 531 for each independent device 520.In the example embodiments of FIGS. 5A and 5B, four partitioned logicsets are shown, e.g., 525-1, . . . , 525-M, each associated with aparticular device 520. Each partitioned logic 525-1, . . . , 525-M maybe loosely associated with a link 529-1, . . . , 529-4. In this manner,one or more host(s) 510 may have the ability to minimize bandwidthlatency through the logic component 502 by logically sending requestpackets to links 529 physically closest to the associated partitionedlogic 525 of a particular device 520.

In one or more embodiments, partitioned portions 521-1, 521-2, . . . ,521-N (generally referred to as 521) of the plurality of memorycomponents 501-1, . . . , 501-N within a target device 520 may be brokeninto banks of dynamic random access memories (DRAMs). In this example,access through stacked memory components 501-1, . . . , 501-N may accessa particular memory bank, e.g., DRAM bank. In an example embodimentwhere memory components 501-1, . . . , 501-N are separate die and/ordistinct memory layers, lower banks, e.g., 521-1, can be configured inlower die and/or layers, e.g., 501-1, while higher banks, e.g., 521-2, .. . , 521-N, can be configured in higher die and/or layers, e.g., 501-2,. . . , 501-N. A DRAM bank may be organized using rows and columns with16K columns and 512 rows. Thus, in the example embodiments of FIGS. 5Aand 5B, partitioned logic 525-1, . . . , 525-M may organize DRAM intoone megabit (1 Mb) blocks each addressing 16-bytes. Read or writerequests to a partitioned portions 521-1, . . . , 521-N of the pluralityof memory components 501-1, . . . , 501-N can be performed in 32-bytesfor each column fetch.

In this example, partitioned logic 525 including control logic 531associated with a plurality of banks 521-1, . . . , 521-N for a givenlogic/memory device 520 can decode signals received from a host 510.According to various embodiments, these signals can include chip enablesignals, write enable signals, debugging indication signals, and addresslatch signals that are used to control DRAM bank operations, includingtraditional data read, data write, and data erase operations as well aslogical Boolean AND, OR, XOR, etc. operations performed with the memoryarrays and/or sensing circuitry to a PIM capable DRAM bank. Thus,partitioned logic 525 may be responsible for executing instructions froma host 510 for a PIM capable logic/memory device 520.

In the embodiment of FIG. 5A the partitioned logic 525 of the logiccomponent 502 includes control logic 531 and a sequencer 532 and thepartitioned portions 521-1, . . . , 521-N of the plurality of memorycomponents 501-1, . . . , 501-N include timing circuitry 533, separatefrom traditional DDR control registers 536, associated with a PIMcapable logic/memory device 520 to perform logical operations.

In the embodiment of FIG. 5B the partitioned logic 525 of the logiccomponent 502 includes control logic 531 and the partitioned portions521-1, . . . , 521-N of the plurality of memory components 501-1, . . ., 501-N include a sequencer 532 and timing circuitry 533, separate fromtraditional DDR control registers 536, associated with a PIM capablelogic/memory device 520 to perform logical operations.

According to various embodiments, and as described in more detail in theexamples of FIGS. 6-8, the logic/memory devices described in FIGS. 3A-5Bmay be configured to execute of PIM commands to control sensingcircuitry including compute components shown as 631 in FIGS. 6 and 731in FIG. 7, to implement logical functions such as AND, OR, NOT, NAND,NOR, and XOR logical functions. Additionally the logic/memory devicesdescribed in FIGS. 3A-5B may be configured to control the sensingcircuitry to perform non-Boolean logic operations, including copy,compare and erase operations, as part of executing DRAM requests. Thus,one or more logical functions of the controller 240 to a PIM capabledevice described in connection with FIG. 2 may be partitioned between aplurality of memory components and one or more logic components to alogic/memory device.

FIG. 6 is a schematic diagram illustrating sensing circuitry 650 inaccordance with a number of embodiments of the present disclosure. Thesensing circuitry 650 can represent the sensing circuitry 150 shown inFIG. 1. In FIG. 6, a memory cell comprises a storage element (e.g.,capacitor) and an access device (e.g., transistor). For instance, afirst memory cell comprises transistor 602-1 and capacitor 603-1, and asecond memory cell comprises transistor 602-2 and capacitor 603-2, etc.In this example, the memory array 630 is a DRAM array of 1T1C (onetransistor one capacitor) memory cells. In a number of embodiments, thememory cells may be destructive read memory cells (e.g., reading thedata stored in the cell destroys the data such that the data originallystored in the cell is refreshed after being read).

The cells of the memory array 630 can be arranged in rows coupled byword lines 604-X (Row X), 604-Y (Row Y), etc., and columns coupled bypairs of complementary sense lines (e.g., data linesDIGIT(n−1)/DIGIT(n−1)_, DIGIT(n)/DIGIT(n)_, DIGIT(n+1)/DIGIT(n+1)_). Theindividual sense lines corresponding to each pair of complementary senselines can also be referred to as data lines 605-1 (D) and 605-2 (D_)respectively. Although only one pair of complementary data lines areshown in FIG. 6, embodiments of the present disclosure are not solimited, and an array of memory cells can include additional columns ofmemory cells and/or data lines (e.g., 4,096, 8,192, 16,384 data lines,etc.).

Memory cells can be coupled to different data lines and/or word lines.For example, a first source/drain region of a transistor 602-1 can becoupled to data line 605-1 (D), a second source/drain region oftransistor 602-1 can be coupled to capacitor 603-1, and a gate of atransistor 602-1 can be coupled to word line 604-Y. A first source/drainregion of a transistor 602-2 can be coupled to data line 605-2 (D_), asecond source/drain region of transistor 602-2 can be coupled tocapacitor 603-2, and a gate of a transistor 602-2 can be coupled to wordline 604-X. The cell plate, as shown in FIG. 6, can be coupled to eachof capacitors 603-1 and 603-2. The cell plate can be a common node towhich a reference voltage (e.g., ground) can be applied in variousmemory array configurations.

The memory array 630 is coupled to sensing circuitry 650 in accordancewith a number of embodiments of the present disclosure. In this example,the sensing circuitry 650 comprises a sense amplifier 606 and a computecomponent 631 corresponding to respective columns of memory cells (e.g.,coupled to respective pairs of complementary data lines). The senseamplifier 606 can be coupled to the pair of complementary sense lines605-1 and 605-2. The compute component 631 can be coupled to the senseamplifier 606 via pass gates 607-1 and 607-2. The gates of the passgates 607-1 and 607-2 can be coupled to logical operation selectionlogic 613.

The logical operation selection logic 613 can be configured to includepass gate logic for controlling pass gates that couple the pair ofcomplementary sense lines un-transposed between the sense amplifier 606and the compute component 631 and/or swap gate logic for controllingswap gates that couple the pair of complementary sense lines transposedbetween the sense amplifier 606 and the compute component 631. Thelogical operation selection logic 613 can also be coupled to the pair ofcomplementary sense lines 605-1 and 605-2. The logical operationselection logic 613 can be configured to control continuity of passgates 607-1 and 607-2 based on a selected logical operation, asdescribed in detail below for various configurations of the logicaloperation selection logic 613.

The sense amplifier 606 can be operated to determine a data value (e.g.,logic state) stored in a selected memory cell. The sense amplifier 606can comprise a cross coupled latch, which can be referred to herein as aprimary latch. In the example illustrated in FIG. 6, the circuitrycorresponding to sense amplifier 606 comprises a latch 615 includingfour transistors coupled to a pair of complementary data lines D 605-1and D_ 605-2. However, embodiments are not limited to this example. Thelatch 615 can be a cross coupled latch (e.g., gates of a pair oftransistors, such as n-channel transistors (e.g., NMOS transistors)627-1 and 627-2 are cross coupled with the gates of another pair oftransistors, such as p-channel transistors (e.g., PMOS transistors)629-1 and 629-2). The cross coupled latch 615 comprising transistors627-1, 627-2, 629-1, and 629-2 can be referred to as a primary latch.

In operation, when a memory cell is being sensed (e.g., read), thevoltage on one of the data lines 605-1 (D) or 605-2 (D_) will beslightly greater than the voltage on the other one of data lines 605-1(D) or 605-2 (D_). An ACT signal and the RNL* signal can be driven lowto enable (e.g., fire) the sense amplifier 606. The data lines 605-1 (D)or 605-2 (D_) having the lower voltage will turn on one of the PMOStransistor 629-1 or 629-2 to a greater extent than the other of PMOStransistor 629-1 or 629-2, thereby driving high the data line 605-1 (D)or 605-2 (D_) having the higher voltage to a greater extent than theother data line 605-1 (D) or 605-2 (D_) is driven high.

Similarly, the data line 605-1 (D) or 605-2 (D_) having the highervoltage will turn on one of the NMOS transistor 627-1 or 627-2 to agreater extent than the other of the NMOS transistor 627-1 or 627-2,thereby driving low the data line 605-1 (D) or 605-2 (D_) having thelower voltage to a greater extent than the other data line 605-1 (D) or605-2 (D_) is driven low. As a result, after a short delay, the dataline 605-1 (D) or 605-2 (D_) having the slightly greater voltage isdriven to the voltage of the supply voltage V_(CC) through sourcetransistor 611, and the other data line 605-1 (D) or 605-2 (D_) isdriven to the voltage of the reference voltage (e.g., ground) throughthe sink transistor 613. Therefore, the cross coupled NMOS transistors627-1 and 627-2 and PMOS transistors 629-1 and 629-2 serve as a senseamplifier pair, which amplify the differential voltage on the data lines605-1 (D) and 605-2 (D_) and operate to latch a data value sensed fromthe selected memory cell.

Embodiments are not limited to the sense amplifier 606 configurationillustrated in FIG. 6. As an example, the sense amplifier 606 can becurrent-mode sense amplifier and/or single-ended sense amplifier (e.g.,sense amplifier coupled to one data line). Also, embodiments of thepresent disclosure are not limited to a folded data line architecturesuch as that shown in FIG. 6.

The sense amplifier 606 can, in conjunction with the compute component631, be operated to perform various logical operations using data froman array as input. In a number of embodiments, the result of a logicaloperation can be stored back to the array without transferring the datavia a data line address access (e.g., without firing a column decodesignal such that data is transferred to circuitry external from thearray and sensing circuitry via local I/O lines). As such, a number ofembodiments of the present disclosure can enable performing logicaloperations and compute functions associated therewith using less powerthan various previous approaches. Additionally, since a number ofembodiments eliminate the need to transfer data across I/O lines inorder to perform compute functions (e.g., between memory and discreteprocessor), a number of embodiments can enable an increased parallelprocessing capability as compared to previous approaches.

The sense amplifier 606 can further include equilibration circuitry 614,which can be configured to equilibrate the data lines 605-1 (D) and605-2 (D_). In this example, the equilibration circuitry 614 comprises atransistor 624 coupled between data lines 605-1 (D) and 605-2 (D_). Theequilibration circuitry 614 also comprises transistors 625-1 and 625-2each having a first source/drain region coupled to an equilibrationvoltage (e.g., V_(DD)/2), where V_(DD) is a supply voltage associatedwith the array. A second source/drain region of transistor 625-1 can becoupled data line 605-1 (D), and a second source/drain region oftransistor 625-2 can be coupled data line 605-2 (D_). Gates oftransistors 624, 625-1, and 625-2 can be coupled together, and to anequilibration (EQ) control signal line 626. As such, activating EQenables the transistors 624, 625-1, and 625-2, which effectively shortsdata lines 605-1 (D) and 605-2 (D_) together and to the an equilibrationvoltage (e.g., V_(DD)/2).

Although FIG. 6 shows sense amplifier 606 comprising the equilibrationcircuitry 614, embodiments are not so limited, and the equilibrationcircuitry 614 may be implemented discretely from the sense amplifier606, implemented in a different configuration than that shown in FIG. 6,or not implemented at all.

As described further below, in a number of embodiments, the sensingcircuitry (e.g., sense amplifier 606 and compute component 631) can beoperated to perform a selected logical operation and initially store theresult in one of the sense amplifier 606 or the compute component 631without transferring data from the sensing circuitry via an I/O line(e.g., without performing a data line address access via activation of acolumn decode signal).

Performance of logical operations (e.g., Boolean logical functionsinvolving data values) is fundamental and commonly used. Boolean logicfunctions are used in many higher level functions. Consequently, speedand/or power efficiencies that can be realized with improved logicaloperations, can translate into speed and/or power efficiencies of higherorder functionalities.

As shown in FIG. 6, the compute component 631 can also comprise a latch,which can be referred to herein as a secondary latch 664. The secondarylatch 664 can be configured and operated in a manner similar to thatdescribed above with respect to the primary latch 615, with theexception that the pair of cross coupled p-channel transistors (e.g.,PMOS transistors) of the secondary latch can have their respectivesources coupled to a supply voltage (e.g., V_(DD)), and the pair ofcross coupled n-channel transistors (e.g., NMOS transistors) of thesecondary latch can have their respective sources selectively coupled toa reference voltage (e.g., ground), such that the secondary latch iscontinuously enabled. The configuration of the compute component is notlimited to that shown in FIG. 6 at 631, and various other embodimentsare described further below.

FIG. 7 is a schematic diagram illustrating sensing circuitry capable ofimplementing an XOR logical operation in accordance with a number ofembodiments of the present disclosure. FIG. 7 shows a sense amplifier706 coupled to a pair of complementary sense lines 705-1 and 705-2,logical operation select logic 713, and a compute component 731 coupledto the sense amplifier 706 via pass gates 707-1 and 707-2. The senseamplifier 706 shown in FIG. 7 can correspond to sense amplifier 606shown in FIG. 6. The compute component 731 shown in FIG. 7 cancorrespond to sensing circuitry, including compute component, 150 inFIG. 1. The logical operation selection logic 713 shown in FIG. 7 cancorrespond to logical operation selection logic 613 shown in FIG. 6. Thegates of the pass gates 707-1 and 707-2 can be controlled by a logicaloperation selection logic 713 signal, (e.g., Pass). For example, anoutput of the logical operation selection logic 713 can be coupled tothe gates of the pass gates 707-1 and 707-2. Further, the computecomponent 731 can comprise a loadable shift register configured to shiftdata values left and right.

According to the embodiment illustrated in FIG. 7, the computecomponents 731 can comprise respective stages (e.g., shift cells) of aloadable shift register configured to shift data values left and right.For example, as illustrated in FIG. 7, each compute component 731 (e.g.,stage) of the shift register comprises a pair of right-shift transistors781 and 786, a pair of left-shift transistors 789 and 790, and a pair ofinverters 787 and 788. The signals PHASE 1R, PHASE 2R, PHASE 1L, andPHASE 2L can be applied to respective control lines 782, 783, 791 and792 to enable/disable feedback on the latches of the correspondingcompute components 731 in association with performing logical operationsand/or shifting data in accordance with embodiments described herein.

The sensing circuitry shown in FIG. 7 shows operation selection logic713 coupled to a number of logic selection control input control lines,including ISO, TF, TT, FT, and FF. Selection of a logical operation froma plurality of logical operations is determined from the condition oflogic selection control signals on the logic selection control inputlines, as well as the data values present on the pair of complementarysense lines 705-1 and 705-2 when isolation transistors 750-1 and 750-2are enabled via an ISO control signal being asserted.

According to various embodiments, the operation selection logic 713 caninclude four logic selection transistors: logic selection transistor 762coupled between the gates of the swap transistors 742 and a TF signalcontrol line, logic selection transistor 752 coupled between the gatesof the pass gates 707-1 and 707-2 and a TT signal control line, logicselection transistor 754 coupled between the gates of the pass gates707-1 and 707-2 and a FT signal control line, and logic selectiontransistor 764 coupled between the gates of the swap transistors 742 anda FF signal control line. Gates of logic selection transistors 762 and752 are coupled to the true sense line through isolation transistor750-1 (having a gate coupled to an ISO signal control line). Gates oflogic selection transistors 764 and 754 are coupled to the complementarysense line through isolation transistor 750-2 (also having a gatecoupled to an ISO signal control line).

Data values present on the pair of complementary sense lines 705-1 and705-2 can be loaded into the compute component 731 via the pass gates707-1 and 707-2. The compute component 731 can comprise a loadable shiftregister. When the pass gates 707-1 and 707-2 are OPEN, data values onthe pair of complementary sense lines 705-1 and 705-2 are passed to thecompute component 731 and thereby loaded into the loadable shiftregister. The data values on the pair of complementary sense lines 705-1and 705-2 can be the data value stored in the sense amplifier 706 whenthe sense amplifier is fired. In this example, the logical operationselection logic signal, Pass, is high to OPEN the pass gates 707-1 and707-2.

The ISO, TF, TT, FT, and FF control signals can operate to select alogical function to implement based on the data value (“B”) in the senseamplifier 706 and the data value (“A”) in the compute component 731. Inparticular, the ISO, TF, TT, FT, and FF control signals are configuredto select the logical function to implement independent from the datavalue present on the pair of complementary sense lines 705-1 and 705-2(although the result of the implemented logical operation can bedependent on the data value present on the pair of complementary senselines 705-1 and 705-2. For example, the ISO, TF, TT, FT, and FF controlsignals select the logical operation to implement directly since thedata value present on the pair of complementary sense lines 705-1 and705-2 is not passed through logic to operate the gates of the pass gates707-1 and 707-2.

Additionally, FIG. 7 shows swap transistors 742 configured to swap theorientation of the pair of complementary sense lines 705-1 and 705-2between the sense amplifier 706 and the compute component 731. When theswap transistors 742 are OPEN, data values on the pair of complementarysense lines 705-1 and 705-2 on the sense amplifier 706 side of the swaptransistors 742 are oppositely-coupled to the pair of complementarysense lines 705-1 and 705-2 on the compute component 731 side of theswap transistors 742, and thereby loaded into the loadable shiftregister of the compute component 731.

The logical operation selection logic 713 signal Pass can be activated(e.g., high) to OPEN the pass gates 707-1 and 707-2 (e.g., conducting)when the ISO control signal line is activated and either the TT controlsignal is activated (e.g., high) with data value on the true sense lineis “1” or the FT control signal is activated (e.g., high) with the datavalue on the complement sense line is “1.”

The data value on the true sense line being a “1” OPENs logic selectiontransistors 752 and 762. The data value on the complimentary sense linebeing a “1” OPENs logic selection transistors 754 and 764. If the ISOcontrol signal or either the respective TT/FT control signal or the datavalue on the corresponding sense line (e.g., sense line to which thegate of the particular logic selection transistor is coupled) is nothigh, then the pass gates 707-1 and 707-2 will not be OPENed by aparticular logic selection transistor.

The logical operation selection logic signal Pass* can be activated(e.g., high) to OPEN the swap transistors 742 (e.g., conducting) whenthe ISO control signal line is activated and either the TF controlsignal is activated (e.g., high) with data value on the true sense lineis “1,” or the FF control signal is activated (e.g., high) with the datavalue on the complement sense line is “1.” If either the respectivecontrol signal or the data value on the corresponding sense line (e.g.,sense line to which the gate of the particular logic selectiontransistor is coupled) is not high, then the swap transistors 742 willnot be OPENed by a particular logic selection transistor.

The Pass* control signal is not necessarily complementary to the Passcontrol signal. It is possible for the Pass and Pass* control signals toboth be activated or both be deactivated at the same time. However,activation of both the Pass and Pass* control signals at the same timeshorts the pair of complementary sense lines together, which may be adisruptive configuration to be avoided.

The sensing circuitry illustrated in FIG. 7 is configured to select oneof a plurality of logical operations to implement directly from the fourlogic selection control signals (e.g., logical operation selection isnot dependent on the data value present on the pair of complementarysense lines). Some combinations of the logic selection control signalscan cause both the pass gates 707-1 and 707-2 and swap transistors 742to be OPEN at the same time, which shorts the pair of complementarysense lines 705-1 and 705-2 together. According to a number ofembodiments of the present disclosure, the logical operations which canbe implemented by the sensing circuitry illustrated in FIG. 7 can be thelogical operations summarized in the logic tables shown in FIG. 8.

FIG. 8 is a logic table illustrating selectable logic operation resultsimplemented by a sensing circuitry shown in FIG. 7 in accordance with anumber of embodiments of the present disclosure. The four logicselection control signals (e.g., TF, TT, FT, and FF), in conjunctionwith a particular data value present on the complementary sense lines,can be used to select one of plural logical operations to implementinvolving the starting data values stored in the sense amplifier 706 andcompute component 731. The four control signals, in conjunction with aparticular data value present on the complementary sense lines, controlsthe continuity of the pass gates 707-1 and 707-2 and swap transistors742, which in turn affects the data value in the compute component 731and/or sense amplifier 706 before/after firing. The capability toselectably control continuity of the swap transistors 742 facilitatesimplementing logical operations involving inverse data values (e.g.,inverse operands and/or inverse result), among others.

Logic Table 8-1 illustrated in FIG. 8 shows the starting data valuestored in the compute component 731 shown in column A at 844, and thestarting data value stored in the sense amplifier 706 shown in column Bat 845. The other 3 column headings in Logic Table 8-1 refer to thecontinuity of the pass gates 707-1 and 707-2, and the swap transistors742, which can respectively be controlled to be OPEN or CLOSED dependingon the state of the four logic selection control signals (e.g., TF, TT,FT, and FF), in conjunction with a particular data value present on thepair of complementary sense lines 705-1 and 705-2. The “Not Open” columncorresponds to the pass gates 707-1 and 707-2 and the swap transistors742 both being in a non-conducting condition, the “Open True”corresponds to the pass gates 707-1 and 707-2 being in a conductingcondition, and the “Open Invert” corresponds to the swap transistors 742being in a conducting condition. The configuration corresponding to thepass gates 707-1 and 707-2 and the swap transistors 742 both being in aconducting condition is not reflected in Logic Table 8-1 since thisresults in the sense lines being shorted together.

Via selective control of the continuity of the pass gates 707-1 and707-2 and the swap transistors 742, each of the three columns of theupper portion of Logic Table 8-1 can be combined with each of the threecolumns of the lower portion of Logic Table 8-1 to provide 3×3=9different result combinations, corresponding to nine different logicaloperations, as indicated by the various connecting paths shown at 875.The nine different selectable logical operations that can be implementedby the sensing circuitry (e.g., 550 in FIG. 5A) are summarized in LogicTable 8-2 illustrated in FIG. 8, including an XOR logical operation.

The columns of Logic Table 8-2 illustrated in FIG. 8 show a heading 880that includes the state of logic selection control signals. For example,the state of a first logic selection control signal is provided in row876, the state of a second logic selection control signal is provided inrow 877, the state of a third logic selection control signal is providedin row 878, and the state of a fourth logic selection control signal isprovided in row 879. The particular logical operation corresponding tothe results is summarized in row 847.

While example embodiments including various combinations andconfigurations of sensing circuitry, sense amplifiers, computecomponent, dynamic latches, isolation devices, and/or shift circuitryhave been illustrated and described herein, embodiments of the presentdisclosure are not limited to those combinations explicitly recitedherein. Other combinations and configurations of the sensing circuitry,sense amplifiers, compute component, dynamic latches, isolation devices,and/or shift circuitry disclosed herein are expressly included withinthe scope of this disclosure.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of one or more embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the one or moreembodiments of the present disclosure includes other applications inwhich the above structures and methods are used. Therefore, the scope ofone or more embodiments of the present disclosure should be determinedwith reference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

What is claimed is:
 1. An apparatus, comprising: a plurality of memorycomponents adjacent to and coupled to one another; a logic componentcoupled to the plurality of memory components; wherein at least onememory component comprises a memory device, the memory devicecomprising: an array of memory cells; sensing circuitry coupled to thearray, the sensing circuitry including a sense amplifier and a computecomponent; and timing circuitry coupled to the array and sensingcircuitry, the timing circuitry configured to control timing ofoperations for the sensing circuitry; and wherein the logic componentcomprises control logic coupled to the timing circuitry, the controllogic configured to execute instructions to cause the sensing circuitryto perform the operations.
 2. The apparatus of claim 1, wherein: thearray of memory cells is a dynamic random access memory (DRAM) array;the timing circuitry is separate from double data rate (DDR) registersused to control read and write DRAM access requests for the array. 3.The apparatus of claim 1, wherein the timing circuitry and the controllogic are in different clock domains and operate at different clockspeeds.
 4. The apparatus of claim 1, wherein the operations includelogical AND, OR, and/or XOR Boolean operations.
 5. The apparatus ofclaim 1, wherein the control logic includes a reduced instructions setcomputer (RISC) type controller which is configured to operate onprocessing in memory (PIM) commands.
 6. The apparatus of claim 1,wherein: the control logic is coupled to a sequencer on the logiccomponent; the control logic is a microcoded engine; and wherein thecontrol logic and the sequencer can execute microcode instructions andcoordinate processing in memory (PIM) operations on the logic component,respectively.
 7. The apparatus of claim 6, wherein the timing circuitryis coupled to the control logic and is configured to control timing oflogical operations using the sensing circuitry.
 8. The apparatus ofclaim 1, wherein the logic component and the plurality of memorycomponents comprise: a plurality of stacked dynamic random access memory(DRAM) memory die coupled to a logic die by through silicon vias (TSVs)to form a processing in memory (PIM) device.
 9. An apparatus,comprising: a plurality of memory die adjacent to and coupled to oneanother; a logic die coupled to the plurality of memory die; whereineach of the plurality of memory die comprise a plurality of partitionedbanks, each bank comprising: an array of memory cells; sensing circuitrycoupled to the array, the sensing circuitry including a sense amplifierand a compute component configured to perform operations; and timingcircuitry coupled to the array and sensing circuitry to control timingof operations for the sensing circuitry; and wherein the logic diecomprises a plurality of partitioned logic each partitioned logiccoupled to a subset of the plurality of partitioned banks to form aplurality of processing in memory (PIM) devices.
 10. The apparatus ofclaim 9, wherein each partitioned logic is configured to executeinstructions to perform operations with the sensing circuitry.
 11. Theapparatus of claim 9, wherein each of the plurality of partitioned bankscomprises a sequencer which has a microcoded engine to coordinateprocessing in memory (PIM) operations.
 12. The apparatus of claim 9,wherein each partitioned logic comprises very large instruction word(VLIW) type controller which is configured to operate on processing inmemory (PIM) commands.
 13. The apparatus of claim 9, wherein: each ofthe plurality of partitioned banks is configured to execute a memoryarray access request; and each partitioned logic is configured toexecute processing in memory (PIM) commands.
 14. The apparatus of claim13, wherein each of the plurality of partitioned banks is configured toperform logical operations using the sensing circuitry.
 15. Theapparatus of claim 14, wherein the logical operations comprise logicalAND, OR and XOR operations using the sensing circuitry.
 16. Theapparatus of claim 9, wherein the logic die comprises an arbitrationcircuit, wherein the arbitration circuit is configured to: receive a PIMrequest from a host; receive a memory array request from the host; andschedule execution of the PIM and memory array requests according to ascheduling policy.
 17. The apparatus of claim 16, wherein the schedulingpolicy is defined to give priority to memory array requests.
 18. Theapparatus of claim 16, wherein the arbitration circuit is configured toschedule a PIM request in accordance with a cache coherency protocolassociated with the host.
 19. The apparatus of claim 9, wherein thelogic die comprises switching circuitry, wherein the switching circuitryis configured to: route memory array requests received from a host; androute PIM requests received from the host to perform a logical operationusing the sensing circuitry.
 20. An apparatus, comprising: a memory die,wherein the memory die comprise a plurality of partitioned banks, eachbank comprising: a memory array; sensing circuitry coupled to the array,the sensing circuitry including sense amplifiers and a compute componentconfigured to perform logical operations; and a first partitioned logiccoupled to the array and sensing circuitry, the first partitioned logicconfigured to provide timing for the logical operations on the sensingcircuitry; and a logic die, wherein the logic die comprises a secondpartitioned logic coupled to the first partitioned logic, the logic dieconfigured to: receive processing in memory (PIM) requests; executemicrocode instructions to perform the logical operations; and apply ascheduling policy between received memory array requests and receivedPIM requests.
 21. The apparatus of claim 20, wherein the logic diecomprises a plurality of second partitioned logic, each secondpartitioned logic associated to at least one of the plurality ofpartitioned banks to form a processing in memory (PIM) device.
 22. Theapparatus of claim 20, wherein the first partitioned logic comprises astate machine to control timing of logical operation on the sensingcircuitry.
 23. The apparatus of claim 20, wherein the first partitionedlogic on the memory die is configured to: retrieve microcodeinstructions; and sequence PIM operations.
 24. The apparatus of claim20, wherein the second partitioned logic comprises control logic toexecute the microcode instructions to perform the logical operations.25. The apparatus of claim 24, wherein the logical operations compriselogical AND, OR and XOR operations performed using the sensingcircuitry.
 26. The apparatus of claim 25 wherein the second partitionedlogic comprises control logic to receive and to operate on memory arrayrequests.
 27. A method for operating a memory device: receiving aprocessing in memory (PIM) request at a logic die in a logic die and amemory die stack; executing microcode instructions on the logic die tocause a logical operation to be performed on the memory die; andapplying an scheduling policy on the logic die between received memoryarray requests and received PIM requests.
 28. The method of claim 27,wherein the method comprises applying a priority to memory arrayrequests over PIM requests.
 29. The method of claim 27, wherein themethod comprises applying a priority to PIM requests over memory arrayrequests.
 30. The method of claim 27, wherein the method comprises:using timing circuitry on the memory die to control timing of logicaloperations using sensing circuitry on pitch with a memory array on thememory die; using control logic on the logic die to execute themicrocode instructions; and operating the timing circuitry and thecontrol logic at different clock speeds.
 31. The method of claim 30,wherein the method comprises using timing circuitry on the memory diewhich is separate from double data rate (DDR) control registersassociated with the memory array.
 32. A method for operating alogic/memory device, comprising: receiving processing in memory (PIM)requests at a logic die of the logic/memory device; receiving memoryarray requests at the logic die; using control logic on the logic die tocause logical operations to be performed on sensing circuitry associatedwith a memory array on a memory die of the logic/memory device; andusing timing circuitry on the memory die to provide timing for thelogical operations on the memory die.
 33. The method of claim 32,wherein the method comprises: using a state machine on the memory die asthe timing circuitry to provide timing for the logical operations; andusing double data rate (DDR) control registers, separate from the timingcircuitry, to provide access to the memory array.
 34. The method ofclaim 32, wherein the method comprises using a reduced instructions setcomputer (RISC) type controller on the logic die as the control logic tocause the logical operations to be performed on the sensing circuitry.35. The method of claim 32, wherein using the control logic on the logicdie comprises using the control logic to: fetch microcode instructionsfrom the memory array; decode the microcode instructions into functioncalls implemented by a sequencer on the logic die.
 36. The method ofclaim 32, wherein the method comprises using a sequencer associated withthe timing circuitry on the memory die to generate sequences ofoperation cycles to perform the logical operations on the sensingcircuitry.
 37. The method of claim 32, wherein using the control logicon the logic die comprises using the control logic to execute microcodeinstructions on the logic die to cause logical operations to beperformed on the memory die.
 38. The method of claim 32, wherein themethod comprises using arbitration circuitry associated with the controllogic on the logic die to apply a scheduling policy between receivedmemory array requests and received PIM requests.